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| ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device. FEATURES * * * * * * * ORDERING INFORMATION DEVICE ZXTD09N50DE6TA ZXTD09N50DE6TC SOT23-6 Low Equivalent On Resistance Low Saturation Voltage IC=1A Continuous Collector Current SOT23-6 package B1 B2 C1 C2 APPLICATIONS LCD Backlighting inverter circuits Boost functions in DC-DC converters E1 E2 REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units 10000 units C1 E1 C2 Top View B1 E2 B2 DEVICE MARKING D619 ISSUE 2 - JUNE 2001 1 ZXTD09N50DE6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25C (a)(d) Linear Derating Factor Power Dissipation at TA=25C (a)(e) Linear Derating Factor Power Dissipation at TA=25C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT 50 50 5 2 1.0 200 0.90 7.2 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V V A A mA W mW/C W mW/C W mW/C C PD PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient (a)(d) Junction to Ambient (b)(d) Junction to Ambient (a)(e) SYMBOL R JA R JA R JA VALUE 139 73 113 UNIT C/W C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. ISSUE 2 - JUNE 2001 2 ZXTD09N50DE6 E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL V (BR)CBO V (BR)CEO MIN. 50 50 5 10 10 10 24 60 120 160 940 850 200 300 200 75 20 420 450 350 130 60 215 10 150 425 MHz pF ns ns 35 80 200 270 1100 1100 TYP. MAX. UNIT V V V nA nA nA mV mV mV mV mV mV CONDITIONS. I C = 100A I C = 10mA* I E = 100A V CB = 40V V EB = 4V V CES = 40V Emitter-Base Breakdown V (BR)EBO Voltage Collector Cut-Off Current I CBO Emitter Cut-Off Current I EBO Collector Emitter Cut-Off I CES Current Collector-Emitter Saturation Voltage V CE(sat) IC= IC= IC= IC= 100mA, I B = 10mA* 250mA, I B = 10mA* 500mA, I B = 10mA* 1A, I B = 50mA* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) h FE I C = 1A, I B = 50mA* I C = 1A, V CE = 2V* I C =10mA, V CE = 2V* I C = 100mA, V CE =2 V* I C = 500mA, V CE =2V* I C = 1A, V CE = 2V* I C = 1.5A, V CE =2 V* I C = 50mA, V CE =10V f= 100MHz V CB = 10V, f=1MHz V CC =10 V, I C = 1A I B1 =I B2 =100mA Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT C obo t (on) t (off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ISSUE 2 - JUNE 2001 3 ZXTD09N50DE6 TYPICAL CHARACTERISTICS 0.4 +25C 0.4 IC/IB=50 0.3 0.3 VCE(sat) - (V) VCE(sat) - (V) IC/IB=10 IC/IB=50 IC/IB=100 0.2 0.2 -55C +25C +100C +150C 0.1 0.1 0 1m 10m 100m 1 10 0 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 800 VCE=2V 1.0 0.8 IC/IB=50 hFE - Typical Gain +100C VBE(sat) - (V) 600 0.6 0.4 0.2 0 400 +25C -55C 200 -55C +25C +100C +150C 0 1m 10m 100m 1 10 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.15 10 0.9 IC - Collector Current (A) VBE(on) - (V) 1 0.6 -55C +25C +100C +150C 100m 0.3 DC 1s 100ms 10ms 1ms 100s 0 1m 10m 100m 1 10 10m 100m 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area ISSUE 2 - JUNE 2001 4 ZXTD09N50DE6 E6 ISSUE 2 - JUNE 2001 5 ZXTD09N50DE6 ISSUE 2 - JUNE 2001 6 ZXTD09N50DE6 E6 ISSUE 2 - JUNE 2001 7 ZXTD09N50DE6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS b e L2 E E1 e1 D a DATUM A C A A2 A1 DIM Millimetres Min A A1 A2 b C D E E1 L e e1 L 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.10 0.95 REF 1.90 REF 0 Inches Min 0.35 0 0.035 0.014 0.0035 0.110 0.102 0.059 0.004 0.037 REF 0.074 REF Max 0.057 0.006 0.051 0.019 0.008 0.118 0.118 0.069 0.002 Max 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.60 10 0 10 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. Suite 315 700 Veterans Memorial Highway Hauppauge NY11788 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 2001 www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 2 - JUNE 2001 8 |
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